University of Minnesota
University of Minnesota
http://www.umn.edu/
612-625-5000

13th Non-Volatile Memory Technology Symposium (NVMTS 2013); University of Minnesota, Minneapolis, August 12 through August 14 2013

Conference Program

All talks will be held in Van Vleck Lecture Hall (Tate 150).

Monday Schedule

Tuesday Schedule

Wednesday Schedule

To download your electronic copy of the NVMTS 2013 program, please click on the link below. Once you click it, a zip file containing the program will begin downloading on your computer.

NVMTS 2013 Program Download Link

 

Monday, August 12 (jump to top)

  Time (CT) Talk Speaker Affiliation Country
  8:20 AM Welcome and Opening Speech Jian-Ping Wang Univ. of Minnesota USA
A-1 8:30 AM Keynote: "Emerging Memory Technology Landscape" Gurtej Sandhu Micron USA
Session 1 - FLASH
A-2 9:10 AM "Recent Progress and Future Directions in NAND Flash Scaling" Akira Goda Micron USA
Session 2 - MRAM 1
A-3 9:35 AM "Challenges and Opportunities of Magnetoresistive Based Memory and Logic and their Integration" Jian-Ping Wang Univ. of Minnesota USA
A-4 10:00 AM "Robust Low-Power Multi-Terminal STT-MRAM" Kaushik Roy Purdue Univ. USA
  10:25 AM Coffee Break (Tate Atrium)
Session 3 - MRAM 2
A-5 10:45 AM "MRAM: Magneto-Resistive Random Access Memory" Ramni Katti Honeywell USA
A-6 11:10 AM "High Speed and Low Current STT-MRAM for Normally-Off Computing" Naoharu Shimomura Toshiba Japan
A-7 11:35 AM "Thermally Assisted Switching STT MRAM" Jean-Pierre Nozieres SPINTEC, CEA/CNRS/UJF

France

A-8 12:00 PM "Selector Devices for Emerging Memory Architectures" An Chen GLOBALFOUNDRIES USA
  12:25 PM Lunch (McNamara)
Session 4 - RRAM 1
B-1 1:30 PM "Investigation of Resistive Memories (RRAM) Potentialities - Switching Phenomena and Retention Performances" Gabriel Molas Advanced Memory Technology France
B-2 1:55 PM "New Insights into Redox Based Resistive Switches" Stephan Tappertzhofen Aachen - Institute of Solid State Research Germany
B-3 2:20 PM "AlOx/WOx Bilayer Resistive Random Access Memory" Huaqiang Wu Tsinghua Univ. China
B-4 2:55 PM "Mechanism of Localized Electrical Conduction at the Onset of Electroforming in TiO2 Based Resistive Switching Devices" James Bain Carnegie Mellon Univ. USA
B-5 3:20 PM "SiOx Resistive Memory Device: Invisible Memory and 1D-1R 1 kbit Integration Application" James M. Tour (Gunuk Wang) Rice Univ. USA
  3:45 PM Coffee Break (Tate Atrium)
Session 5: FeRAM
B-6 4:05 PM "Resistive Switching Memory Effect in a BiFeO3 Ferroelectric Diode" Akihito Sawa AIST Japan
B-7 4:30 PM "Ferroelectric Memories Based on Resistive Switching" Alexei Gruverman Univ. of Nebraska-Lincoln USA
B-8 4:55 PM "Ferroelectric Memories" Edwin Chihchuan Kan Cornell Univ. USA
B-9 5:20 PM "A Dual-Channel Ferroelectric-Gate Field-Effect Transistor" Yukihiro Kaneko Panasonic Japan
  6:00 PM Poster Session & Social Hour
  7:30 PM Dinner

 


Tuesday, August 13 (jump to top)

  Time (CT) Talk Speaker Affiliation Country
C-1 8:30 AM Keynote: "Evolution of PRAM Application with Challenging Technologies" Hongsik Jeong Samsung South Korea
Session 6 - PCRAM
C-2 9:10 AM "Manipulating Material Interfaces for Low current PCRAM" Rong Zhao Singapore Univ. of Technology and Design Singapore
C-3 9:35 AM "Chalcogenide Memristors for Neuromorphic Computing" Xiangshui Miao Hongzhong Univ. of Science and Technology China
C-4 10:00 AM "DFT Simulations of the Crystallization of the Phase-Change Material Ge2Sb2Te5 : Insights on Nucleation and Percolation" Jaakko Akola Tampere Univ. of Technology Finland
  10:25 AM Coffee Break (Tate Atrium)
Session 7 - ReRAM 2
C-5 10:45 AM "Heat Dissipation Mechanisms in Resistive Switching Devices" Eilam Yalon Technion Isreal
C-6 11:10 AM "CMOS-Compatible Nanometallic RRAM Devices" I-Wei Chen Univ. of Pennsylvania USA
C-7 11:35 AM "Resistive Switching Behavior in Two-Dimensional Highly Crystalline Layered Dielectric" Bin Yu State Univ. of New York

USA

C-8 12:00 PM "Resistive Switching in Organic Memory Devices for Extended Flexible Applications" Ru Huang Peking University China
  12:25 PM Lunch (Mississippi Room)
  12:25 PM Committee Meeting and Lunch
Session 8 - Simulation and New Concepts Memory
D-1 1:30 PM "Simulation and Benchmarking of Spintronic Memory and Logic" Dmitri Nikonov Intel USA
D-2 1:55 PM "Towards a Nonvolatile VLSI Processor Using MTJ/MOS-Hybrid Logic-in-Memory Architecture" Takahiro Hanyu Tohoku Univ.

Japan

D-3 2:20 PM "Recent Development of Artificial Cognitive Memory" Luping Shi Tsinghua Univ. China
D-4 2:55 PM "Title: TBA" Xiufeng Han IOP, CAS China
D-5 3:20 PM "Magnetic Ratchet for 3-Dimensional Memory and Logic" Dorothée Petit Univ. of Cambridge UK
D-6 3:45 PM "Ti-Sb-Te material ensuring faster phase change speed for PCRAM" Zhitang Song Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences China
  4:10-6:00 PM Poster Session (Poster Award Judgment and Decision Making; McNamara)
  6:00 - 7:30 PM Bus to Dinner Venue and Social Hour
  7:30 - 9:30 PM Banquet
  9:30 PM Bus Back to Hotel

 


Wednesday, August 14 (jump to top)

  Time (CT) Talk Speaker Affiliation Country
E-1 8:30 AM Keynote: "Emerging Nonvolatile Memories from an Enterprise System Company Perspective" William (Bill) Gallagher IBM USA
Session 9 - MRAM 2
E-2 9:10 AM "Voltage Controlled Spintronics for Nonvolatile Nanoelectronics" Kang Wang UCLA USA
E-3 9:35 AM "Voltage Induced Unipolar Switching in Magnetic Tunnel Junctions with Tunable Energy Barrier" Wei-Gang Wang Univ. of Arizona USA
E-4 10:00 AM "Voltage-controlled Exchange Bias for ultra-low power MRAM Applications" Christian Binek Univ. of Nebraska, Lincoln USA
  10:25 AM Coffee Break (Tate Atrium)
Session 10 - Memory in Logic
E-5 10:45 AM "Reconfigurable Spin Switch for Digital/Analog Computing" Behtash Behin-Aein GLOBALFOUNDRIES USA
E-6 11:10 AM "Title: TBA" Tetsuo Endoh Tohoku Univ. Japan
E-7 11:35 AM "Neuromorphic Computing with Memristive Circuits" Dmitri Strukov Univ. of California, Santa Barbara USA
E-8 12:00 PM "Mn-Based Magnetic Alloys and Magnetic Tunnel Junctions for STT-MRAM Applications" Shigemi Mizukami Tohoku Univ. Japan
  12:25 PM Lunch (Rapson)
Session 11 - MRAM 3
F-1 1:30 PM "Study on Electrical and Magnetic Performances of Thin Film Cr2O3/Fe2O3 Sesquioxide with ME Effect" Masashi Sahashi Tohoku Univ. Japan
F-2 1:55 PM "Orthogonal Spin Transfer Torque MRAM" Andrew Kent New York Univ. USA
F-3 2:20 PM "Non-Volatile Spin Logic" Alex Shukh Spingate Technology USA
F-4 2:55 PM "Title: TBA" Pete Eames NVE Technology USA
F-5 3:20 PM "Embedded STT-MRAM: Tailoring Attributes for Mobile Systems" Seung H. Kang Qualcomm Technologies USA
F-6 3:45 PM "Processing of Perpendicular MTJ Stack for STtRAM Applications" Mahendra Pakala Applied Materials USA
  4:10 PM Award Presentation
  4:20 PM Closing Remarks Jian-Ping Wang and Luping Shi    
End of Conference