Publications

 


2017:

B. Deng, V. Tran, H. Jiang, C. Li, Y. Xie, Q. Guo, X. Wang, H. Tian, S. J. Koester, H. Wang, J. Cha, Q. Xia, L. Yang, and F. Xia, “Efficient electrical control of thin-film black phosphorus bandgap,” Nat. Commun. 8, 14474 (2017). Link

M. C. Robbins, S. Namgung, S.-H. Oh, and S. J. Koester, “Cyclical thinning of black phosphorus with high spatial resolution for heterostructure devices,” ACS Appl. Mater. Interfaces 9, 12654-12662 (2017). Link

N. Haratipour, S. Namgung, R. Grassi, T. Low, S.-H. Oh, and S. J. Koester, “High-performance black phosphorus MOSFETs using crystal orientation control and contact engineering,” IEEE Elect. Dev. Lett. 38, 685-688 (2017). Link

Y. Yoo, Z. P. Degregorio, Y. Su, S. J. Koester, J. E. Johns, “In-plane 2H-1T' MoTe2 homojunctions synthesized by flux-controlled phase engineering,” Adv. Mater. 29, 1605461 (2017). Link

D. Joung, A. Nemilentsau, K. Agarwal, C. Dai, C. Liu, Q. Su, J. Li, T. Low, S. J. Koester, and J.-H. Cho, “Self-assembled three-dimensional graphene-based polyhedrons inducing volumetric light confinement,” Nano Lett. 17, 1987-1994 (2017). Link

M. C. Robbins and S. J. Koester, “Black phosphorus p- and n-MOSFETs with electrostatically doped contacts,” IEEE Elect. Dev. Lett. 38, 283-286 (2017). Link

C. Liang, Y. Su, E. X. Zhang, K. Ni, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood, and S. J. Koester, “Total ionizing dose effects on passivated black phosphorus transistors,” IEEE Trans. Nucl. Sci. 64, 170-175 (2017). Link

Y. Li, V. R. S. K. Chaganti, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Demonstration of a passive wireless radiation detector using fully-depleted silicon-on-insulator varactors,” IEEE Trans. Nucl. Sci. 64, 544-549 (2017). Link

C. D. Liang, R. Ma, Y. Su, E. X. Zhang, M. L. Alles, P. Wang, S. M. Zhao, S. J. Koester, D. M. Fleetwood, and R. D. Schrimpf, “Radiation-induced charge trapping in black phosphorus MOSFETs with HfO2 gate dielectrics,” 2017 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2017), New Orleans, LA, Jul. 17-21, 2017.

S. J. Koester, “Sensor applications of graphene quantum capacitance varactors,” Diamond and Carbon Materials, Chicago, IL, Jul. 17-18, 2017 (invited).

M. C. Robbins, N. Haratipour, and S. J. Koester, “Band-to-band tunneling limited ambipolar current in black phosphorus MOSFETs,” 75th Device Research Conference (DRC), Notre Dame, IN, Jun. 25-28, 2017. Link

M. R. M. Atalla and S. J. Koester, “Black phosphorus avalanche photodetector,” 75th Device Research Conference (DRC), Notre Dame, IN, Jun. 25-28, 2017. Link

J.-P. Wang, S. S. Sapatnekar, C. H. Kim, P. Crowell, S. Koester, S. Datta, K. Roy, A. Raghunathan, X. S. Hu, M. Niemier, A. Naeemi, C.-L. Chien, C. Ross, and R. Kawakami, “A pathway to enable exponential scaling for the beyond-CMOS era,” Proc. of the 54th Design Automation Conference (DAC '17), Austin, TX, Jun. 18-22, 2017. Link

S. J. Koester, “Two-dimensional materials: from properties to applications,” Materials Research Society Meeting, Phoenix, AZ, Apr. 17-21, 2017 (invited).

M. A. Ebrish and S. J. Koester, “Understanding graphene’s interface with different dielectrics in graphene devices,” Materials Research Society Meeting, Phoenix, AZ, Apr. 17-21, 2017.

2016:

S. Namgung, J. Shaver, S.-H. Oh, and S. J. Koester, “Multimodal photodiode and phototransistor device based on two-dimensional materials,” ACS Nano 10, 10500–10506 (2016). Link

G. Stecklein, P. A. Crowell, J. Li, Y. Anugrah, Q. Su, and S. J. Koester, “Contact-induced spin relaxation in graphene nonlocal spin valves,” Phys. Rev. Appl. 6, 054015 (2016). Link

C. U. Kshirsagar, W. Xu, Y. Su, M. C. Robbins, C. H. Kim, and S. J. Koester, “Dynamic memory cells using MoS2 field-effect transistors demonstrating femtoampere leakage currents,” ACS Nano 10, 8457–8464 (2016). Link

V. O. Özçelik, J. G. Azadani, C, Yang, S. J. Koester, and T. Low, “Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching,” Phys. Rev. B 94, 035125 (2016). Link

N. Haratipour, S. Namgung, S.-H. Oh, and S. J. Koester, “Fundamental limits on the subthreshold slope in Schottky source/drain black phosphorus field-effect transistors,” ACS Nano 10, 3791-3800 (2016). Link

Y. Su, C. U. Kshirsagar, M. C. Robbins, N. Haratipour, and S. J. Koester, “Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors,” 2D Mater. 3, 011006 (2016). Link

N. Haratipour, and S. J. Koester, “Ambipolar black phosphorus MOSFETs with record n-channel transconductance,” IEEE Elect. Dev. Lett. 37, 103-106 (2016). Link

R. Ma, Q. Su, J. Li, and S. J. Koester, “Acetone sensing using graphene quantum capacitance varactors," 2016 IEEE Sensors Conference, Orlando, FL, Oct. 30 - Nov. 2, 2016. Link

Y. Zhang, R. Ma, Y. C. Kudva, P. Bühlmann, and S. J. Koester, “Glucose sensing with graphene varactors," 2016 IEEE Sensors Conference, Orlando, FL, Oct. 30 - Nov. 2, 2016. Link

Y.-L. Li, B. J. Gerbi, M. A. Reynolds, and S. J. Koester, “Demonstration of a passive wireless radiation detector using fully-depleted silicon-on-insulator varactors," 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Portland, OR, Jul. 11-15, 2016.

C. D. Liang, Y. Su, E. X. Zhang, M. L. Alles, R. D. Schrimpf, D. M. Fleetwood and S. J. Koester, “Total ionizing dose effects on passivated black phosphorus transistors,” 2016 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2016), Portland, OR, Jul. 11-15, 2016.

S. J. Koester, “Two-dimensional materials for electronic, photonic, spintronic and sensing applications,” 74th Device Research Conference (DRC), Newark, DE, Jun. 19-22, 2016 (invited). Link

N. Haratipour and S. J. Koester, “Quantifying the impact of thickness and drain bias on black phosphorus field effect transistor performance,” 2016 IEEE Silicon Nanoelectronics Workshop, Honolulu, HI, Jul. 12-13, 2016. Link

S. Namgung, J. Shaver, S.-H. Oh, and S. J. Koester, “Large collection area Schottky photodetectors based on two-dimensional materials,” Exploring and Utilizing Electronic Properties of 2D Systems, Gordon Research Conference, South Hadley, MA, Jun. 5-10, 2016.

G. Stecklein, Y. Anugrah, J. Li, S. J. Koester, and P. Crowell, “Role of contact resistance on the effective spin relaxation rate in graphene,” American Physical Society Meeting, Baltimore, MD, Mar. 14-18, 2016.

S. J. Koester, “A novel wireless biosensing platform enabled by graphene varactors,” Pittcon Conference & Expo, Atlanta, GA, Mar. 6-10, 2016 (invited).

2015:

Y.-L. Li, W. Porter, R. Ma, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Capacitance-based dosimetry of Co-60 radiation using fully-depleted silicon-on-insulator devices,” IEEE Trans. Nucl. Sci. 62, 3012-3019 (2015). Link

E. J. Olson, R. Ma, T. Sun, M. A. Ebrish, N. Haratipour, K. Min, N. R. Aluru, and S. J. Koester, “Capacitive sensing of intercalated H2O molecules using graphene,” ACS Appl. Mater. Interfaces 7, 25804-25812 (2015). Link

R. J. Wu, M. Topsakal, T. Low, M. C. Robbins, N. Haratipour, J. S. Jeong, R. M. Wentzcovitch, S. J. Koester, and K. A. Mkhoyan, “Atomic and electronic structure of exfoliated black phosphorus,” J. Vac. Sci. Technol. A. 33, 060604 (2015). Link

N. Haratipour, M. C. Robbins, and S. J. Koester, “Black phosphorus p-MOSFETs with 7-nm HfO2 gate dielectric and low contact resistance,” IEEE Elect. Dev. Lett. 36, 411-413 (2015). Link

Y. Anugrah, M. C. Robbins, P. A. Crowell and S. J. Koester, “Determination of the Schottky barrier height of ferromagnetic contacts to few-layer phosphorene,” Appl. Phys. Lett. 106, 103108 (2015). Link

A. Szabo, S. J. Koester, and M. Luisier, “Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics,” IEEE Elect. Dev. Lett. 36, 514-516 (2015). Link

N. Youngblood, C. Chen, S. J. Koester, and M. Li, “Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current,” Nat. Photonics 9, 247–252 (2015). Link

J. Hu, N. Haratipour, and S. J. Koester, “The effect of output-input isolation on the scaling and energy consumption of all-spin logic devices,” J. Appl. Phys. 117, 17B524 (2015). Link

J. Kim, A. Paul, P. A. Crowell, S. J. Koester, S. S. Sapatnekar, J.-P. Wang, and C. H. Kim, “Spin based computing: device concepts, current status, and a case study on a high performance microprocessor,” Proc. IEEE 103, 106-130 (2015). Link

M. C. Robbins, J. Outlaw, and S. J. Koester, “Controlled thinning of exfoliated black phosphorus using cycled H2O surface adsorption and desorption,” Materials Research Society Meeting, Boston, MA, Nov. 29-Dec. 4, 2015.

N. Wendel, R. Wu, N. Haratipour, M. C. Robbins, K. A. Mkhoyan, S. J. Koester, and S. A. Campbell, “Black phosphorus synthesis and characterization enabling high performance phosphorene transistors,” Materials Research Society Meeting, Boston, MA, Nov. 29-Dec. 4, 2015.

S. J. Koester, “Graphene varactors: a novel wireless biosensing platform,” IEEE-Nanomed 2015, Honolulu, HI, Nov. 15-18, 2015 (invited).

R. J. Wu, M. Topsakal, M. C. Robbins, N. Haratipour, J. S. Jeong, R. M. Wentzcovitch, S. J. Koester, and K. A. Mkhoyan, “Measuring the atomic and electronic structure of black phosphorus with STEM,” Microscopy & Microanalysis, Portland, OR, Aug. 2-6, 2015.

S. J. Koester, “Capacitance-based molecular sensing using graphene varactors," Nano-Mechanical Interfaces, Gordon Research Conference, Theory, Computations and Experiments, Hong Kong, Jul. 19-24, 2015 (invited).

Y.-L. Li, W. Porter, R. Ma, B. J. Gerbi, M. A. Reynolds, and S. J. Koester, “Capacitive-based dosimetry of Co-60 radiation using fully-depleted silicon-on-insulator devices," 2015 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2015), Boston, MA, Jul. 13-17, 2015.

Y. Su, N. Haratipour, M. C. Robbins, C. Kshirsagar, and S. J. Koester, “Integrated MoS2 n-MOSFETs and black phosphorus p-MOSFETs with HfO2 dielectrics and local backgate electrodes,” 73rd Device Research Conference (DRC), Columbus, OH, Jun. 21-25, 2015. Link

N. Haratipour, M. C. Robbins, and S. J. Koester, “Black phosphorus n-MOSFETs with record transconductance,” 73rd Device Research Conference (DRC), Columbus, OH, Jun. 21-25, 2015. Link

S. J. Koester, “2D materials: a platform technology for integrated optoelectronics”, European Materials Research Society 2015 Spring Meeting (E-MRS), Lille, France, May 11-15, 2015 (invited).

S. J. Koester, “2D materials for high-performance electronic, photonic and sensing applications,” Micro- and Nanotechnology Sensors, Systems, and Applications Conference at SPIE DSS 2015, Baltimore, MD, Apr. 20-24, 2015 (invited).

D. Joung, J. Li, S. J. Koester, and J.-H. Cho, “Building three-dimensional microscale graphene-based structures,” Materials Research Society Meeting, San Francisco, CA, Apr. 6-10, 2015.

D. Joung, J. Li, S. J. Koester, and J.-H. Cho, “Building freestanding 3D micro devices,” Materials Research Society Meeting, San Francisco, CA, Apr. 6-10, 2015.

2014:

Y. Li, W. M. Porter, C. Kshirsagar, I. Roth, Y. Su, M. A. Reynolds, B. J. Gerbi, and S. J. Koester, “Fully-depleted silicon-on-insulator devices for radiation dosimetry in cancer therapy,” IEEE Trans. Nucl. Sci. 61, 3443-3450 (2014). Link

M. A. Ebrish, E. J. Olson, and S. J. Koester, “The effect of non-covalent basal plane functionalization on the quantum capacitance in graphene,” ACS Appl. Mater. Interfaces 6, 10296-10303 (2014). Link

N. Youngblood, Y. Anugrah, R. Ma, S. J. Koester, and M. Li, “Multifunctional graphene optical modulator and photodetector integrated on silicon waveguides,” Nano Lett. 14, 2741-2746 (2014). Link

D. A. Deen, E. J Olson, M. A. Ebrish, and S. J. Koester, “Graphene-based quantum capacitance wireless vapor sensors,” IEEE Sensors Journ. 14, 1459-1466 (2014). Link

S. J. Koester and M. Li, “Waveguide-coupled graphene optoelectronics,” IEEE J. Sel. Top. Quant. Electron. 20, 6000211 (2014) (invited). Link

E. J. Olson, Y. Zhang, M. A. Ebrish, R. Ma, N. Haratipour, A. Basu, Y. C. Kudva, and S. J. Koester, “Toward graphene-based wireless glucose sensors,” Materials Research Society Meeting, Boston, MA, Dec. 1-4, 2014.

J. Hu, N. Haratipour, and S. J. Koester, “Design strategies to optimize non-reciprocity in all-spin logic (ASL) devices,” 59th Annual Magnetism and Magnetic Materials (MMM) Conference, Honolulu, HI, Nov. 3-7, 2014.

Y.-L. Li, W. Porter, I. Roth, C. Kshirsagar, Y. Su, B. J. Gerbi, and S. J. Koester, “Fully-depleted silicon-on-insulator devices for use as radiation dosimetry in cancer therapy,” 2014 IEEE Nuclear and Space Radiation Effects Conference (NSREC 2014), Paris, France, Jul. 14-18, 2014.

N. Haratipour, and S. J. Koester, “Multi-layer MoTe2 p-channel MOSFETs with high drive current,” 72nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014. Link

C. Kshirsagar, W. Xu, C. H. Kim, and S. J. Koester, “Design and analysis of MoS2-based MOSFETs for ultra-low-leakage dynamic memory applications,” 72nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014. Link

A. Szabo, S. J. Koester, and M. Luisier, “Metal-dichalcogenide hetero-TFETs: are they a viable option for low power electronics?” 72nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014. Link

M. A. Ebrish, and S. J. Koester, “All-CVD graphene field-effect transistors with h-BN gate dielectric and local back gate,” 72nd Device Research Conference (DRC), Santa Barbara, CA, Jun. 22-25, 2014. Link

N. Youngblood, Y. Anugrah, R. Ma, S. Koester, and M. Li, “Simultaneous optical modulation and detection using graphene integrated on a silicon waveguide,” CLEO: Science and Innovations, San Jose, CA, Jun. 8-13, 2014.

S. J. Koester, M. A. Ebrish, E. J. Olson, and D. A. Deen, “Understanding the electrical properties of graphene using the quantum capacitance effect,” Materials Research Society Meeting, San Francisco, CA, Apr. 21-25, 2014 (invited).

Y. Su, M. A. Ebrish, E. J. Olson, and S. J. Koester, “Physical and electrical characterization of exfoliated SnSe2 thin films,” Materials Research Society Meeting, San Francisco, CA, Apr. 21-25, 2014.

S. J. Koester, “2D materials for optoelectronic applications,” International Conference on Ultimate Integration on Silicon (ULIS2014), Stockholm, Sweden, Apr. 7-9, 2014 (invited).

A. Paul, C. Kshirsagar, S. S. Sapatnekar, S. Koester, and C. H. Kim, “Leakage modeling for devices with steep sub-threshold slope considering random threshold variations,” 2014 27th International Conference on VLSI Design, Mumbai, India, Jan. 5-9, 2014.

2013:

Y. Su, M. A. Ebrish, E. J. Olson, and S. J. Koester, “SnSe2 field-effect transistors with high drive current,” Appl. Phys. Lett. 103, 263104 (2013). Link

D. A. Deen, J. G. Champlain, and S. J. Koester, “Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors,” Appl. Phys. Lett. 103, 073504 (2013). Link

Y. Lee, D. Kim, J. Cai, I. Lauer, L. Chang, S. J. Koester, D. Blaauw, and D. Sylvester, “Low-power circuit analysis and design based on heterojunction tunneling transistors (HETTs),” IEEE Trans. VLSI Sys. 21, 1632-1643 (2013). Link

M. A. Ebrish, E. J. Olson, and S. J. Koester, “Understanding the effect of glucose oxidase surface functionalization on the material and electronic properties of graphene,” 55th Electronic Materials Conference (EMC), Notre Dame, IN, Jun. 26-28, 2013.

N. Harati Pour, Y. Anugrah, S. Wu, X. Xu, and S. J. Koester, “Chemical doping for threshold control and contact resistance reduction in graphene and MoS2 field effect transistors,” 71st Device Research Conference (DRC), Notre Dame, IN, Jun. 23-26, 2013. Link

M. A. Ebrish, D. A. Deen, and S. J. Koester, “Border trap characterization in metal-oxide-graphene capacitors with HfO2 dielectrics,” 71st Device Research Conference (DRC), Notre Dame, IN, Jun. 23-26, 2013. Link

E. J. Olson, D. A. Deen, M. A. Ebrish, A. Basu, Y. C. Kudva, P. Mukherjee, and S. J. Koester, “Wireless graphene-based quantum capacitance sensors for continuous glucose monitoring,” TechConnect World, Washington, DC, May 11-16, 2013.

J. Michel, S. J. Koester, J. Liu, X. Wang, M. W. Geis, S. J. Spector, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, and N.-N. Feng, “Photodetectors,” Handbook of Silicon Photonics (Series in Optics and Optoelectronics), L. Vivien and L. Pavesi, Eds., CRC Press, 2013.

S. J. Koester, T.-J. King Liu, J.-M. Hartmann, R. Loo, Y.-C. Yeo, and M. S. Carroll, “Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012),” Solid State Electron. 83, (2013).

2012:

S. J. Koester, H. Li, and M. Li, “Switching energy limits of waveguide-coupled graphene-on-graphene optical modulators,” Opt. Express 20, 20330-20341 (2012). Link

H. Li, Y. Anugrah, S. J. Koester, and M. Li, “Optical absorption in graphene integrated on silicon waveguides,” Appl. Phys. Lett. 101, 111110 (2012). Link

S. J. Koester and M. Li, “High-speed waveguide-coupled graphene-on-graphene optical modulators,” Appl. Phys. Lett. 100, 171107 (2012). Link

M. A. Ebrish, H. Shao, and S. J. Koester, “Operation of multi-finger graphene quantum capacitance varactors using planarized local bottom gate electrodes,” Appl. Phys. Lett. 100, 143102 (2012). Link

M. A. Ebrish, and S. J. Koester, “Dielectric thickness dependence of quantum capacitance in graphene varactors with local metal back gates,” 70th Device Research Conference (DRC), State College, PA, Jun. 18-20, 2012. Link

2011:

S. J. Koester, “High quality factor graphene varactors for wireless sensing applications,” Appl. Phys. Lett. 99, 165105 (2011). Link

P. M. Solomon, I. Lauer, A. Majumdar, J. T. Teherani, M. Luisier, J. Cai, and S. J. Koester, “Effect of uniaxial strain on the drain current of an heterojunction tunneling field effect transistor,” IEEE Elect. Dev. Lett. 32, 464-466 (2011). Link

S. J. Koester, “Using the quantum capacitance in graphene to enable varactors for passive wireless sensing applications,” IEEE Sensors Conferences, Limerick, Ireland, Oct. 29-31, 2011. Link

G. Vaidhyanathan and S. J. Koester, “High-Q FDSOI varactors for wireless radiation sensing,” IEEE SOI Conference, Tempe, AZ, Oct. 3-6, 2011.

S. J. Koester, "Graphene quantum capacitance varactors for wireless sensing applications,” 69th Device Research Conference (DRC), Santa Barbara, CA, Jun. 20-22, 2011. Link

C. Kshrisagar and S. J. Koester, “InAs/SiGe on Si nanowire tunneling field effect transistors,” 69th Device Research Conference (DRC), Santa Barbara, CA, Jun. 20-22, 2011. Link

S. J. Koester, “Performance capabilities of Si and III-V TFETs,” 2011 CMOS Emerging Technologies Conference, Whistler, BC, Canada, Jun. 15-17, 2011 (invited).

J.-B. Yau, M. S. Gordon, K. P. Rodbell, S. J. Koester, P. W. DeHaven, D.-G. Park, and W. E. Haensch, “FDSOI radiation dosimeters,” 2011 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2011. Link

S. J. Koester, “Are Si/SiGe tunneling transistors a good idea?” Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD 2011), Savannah, GA, Feb. 20-23, 2011 (invited).

F. Liu, R. R. Yu, A. M. Young, L. Shi, K. A. Jenkins, X. Gu, N. R. Klymko, S. Purushothaman, S. J. Koester and W. Haensch, “A 300-mm wafer-level three-dimensional integration scheme using tungsten through-silicon via and hybrid Cu-adhesive bonding,” 3D Integration for VLSI Systems, C. S. Tan, K.-N. Chen and S. J. Koester, Eds., Pan Stanford, Singapore, 2011.

C. S. Tan, K.-N. Chen, and S. J. Koester, editors, “3D Integration for VLSI Systems,” Pan Stanford, ISBN 978-981-4303-81-1, 2011.

2010:

S. O. Koswatta, S. J. Koester, and W. Haensch, “On the possibility of obtaining MOSFET-like performance and sub-60-mV/dec swing in 1-D broken-gap tunnel transistors,” IEEE Trans. Elect. Dev. 57, 3222-3230 (2010). Link

A. Majumdar, C. Ouyang, S. J. Koester, and W. Haensch, “Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs,” IEEE Trans. Elect. Dev. 57, 2067-2072 (2010). Link

Q. Zhang, Y. Q. Lu, H. G. Xing, S. J. Koester, and S. O. Koswatta, “Scalability of atomic-thin-body (ATB) transistors based on graphene nanoribbons,” IEEE Elect. Dev. Lett. 31, 531-533 (2010). Link

T. Barwicz, L. Klein, S. J. Koester, and H. Hamann, “Silicon nanowire piezoresistance: impact of surface crystallographic orientation,” Appl. Phys. Lett. 97, 023110 (2010). Link

L. Chang, D. J. Frank, R. Montoye, S. J. Koester, B. Ji, P. Coteus, R. Dennard, and W. Haensch, “Practical strategies for power-efficient computing technologies,” Proc. IEEE 98, 215-236 (2010) (invited). Link

D. Harame, J. Boquet, M. Östling, Y. Yeo, G. Masini, M. Caymax, T. Krishnamohan, B. Tillack, S. Bedell, S. Miyazaki, A. Reznicek, and S. Koester, editors, “SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices,” Electrochemical Society Transactions, vol. 33, no. 6, Proceedings of the Electrochemical Society Meeting, Las Vegas, NV, Oct. 10-15, 2010.

A. M Young and S. J. Koester, “3D process technology considerations,” Three-Dimesnional Integrated Circuit Design EDA, Design and Microarchitectures, Y. Xie, J. Cong, and S. Sapatnekar, Eds., Springer, New York, 2010.

S. J. Koester, I. Lauer, A. Majumdar, J. Cai, J. Sleight, S. Bedell, P. Solomon, S. Laux, L. Chang, S. Koswatta, W. Haensch, P. Tomasini, and S. Thomas, “Are Si/SiGe tunneling field-effect transistors a good idea?” Proc. of the Electrochemical Society Meeting, Las Vegas, NV, Oct. 10-15, 2010 (invited).

F. Liu, X. Gu, K. A. Jenkins, E. Cartier, Y. Liu, P. Song, and S. J. Koester, “Electrical characterization of 3D through-silicon-vias,” 60th Electronic Components and Technology Conference (ECTC), Las Vegas, NV, Jun. 1-4, 2010.

Y. Lu, A. Seabaugh, P. Fay, S. J. Koester, S. E. Laux, W. Haensch, and S. O. Koswatta, “Geometry dependent tunnel FET performance - dilemma of electrostatics vs. quantum confinement,” 68th Device Research Conference (DRC), South Bend, IN, Jun. 21-23, 2010. Link

Q. Zhang, Y. Lu, G. H. Xing, C. A. Richter, S. J. Koester, and S. O. Koswatta, “Graphene nanoribbon Schottky-barrier FETs for end-of-the-roadmap CMOS: challenges and opportunities,” 68th Device Research Conference (DRC), South Bend, IN, Jun. 21-23, 2010. Link