EE 3161 Semiconductor Devices
Spring 2008 | University of Minnesota Electrical and Computer Engineering
Midterm 1
Monday, March 3 at the usual lecture time and place. Open book, notes, and calculators allowed.
The usual prohibitions against communications devices apply.
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- Topics covered, as announced in lecture on Feb 29, are listed below.
2 questions: 1 more qualititative, 1 quantitative.
Don't expect identical problems to the homework, but of course there won't be any completely bizarre questions.
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- Semiconductor physics:
- Bohr model
- Atoms to semiconductors
- Band models & band gap
- Bonding models & impurities
- Intrinsic and doped semiconductors
- Density of states
- Fermi-Dirac statistics/Boltzmann statistics (and when to use which)
- EF, Ei
- n, p, Nc , Nv , ni
- Mass action law np=ni2 (and when it does/doesn't apply)
- Charge neutrality
- Carrier transport:
- Drift current
- Mobility (and know where the graph is in Pierret!)
- Resistivity (don't count on using the book graph)
- Band bending
- Diffusion (the process)
- Diffusion current
- Diffusivity constant Dp
- Drift and diffusion in equilibrium (calculate)
- Ef : when it is/isn't constant and what that means
- Recombination & generation, GL (note that diode part is not included, will not be on exam)
- Quasi-Fermi levels
- Diode electrostatics:
- Step (abrupt) junction diodes (quantitatively), linear diodes, others? . . .
- ρ, ε, V distributions
- Vbi
- xn, xp, W, and the effects of VA on them
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- Class score results