Publications

2018

• "Mobility Anisotropy in Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics", Nazila Haratipour, Yue Liu, Ryan J Wu, Seon Namgung, P Paul Ruden, K Andre Mkhoyan, Sang-Hyun Oh, Steven J Koester, IEEE Transactions on Electron Devices 99, 1-9 (2018).
  
• "Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors", Tao He, Yanfei Wu, Gabriele D’Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P Paul Ruden, Frank Würthner, C Daniel Frisbie, Nature communications 9 (1), 2141 (2018).
  

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2017

• "Magneto-optical effects in organic semiconductor devices", Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden, Magnetic Field Effects, World Scientific (2017).
  
• "Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus", Yue Liu, P Paul Ruden, Physical Review B 95 (16), 165446 (2017).
  
• "Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes", Sha Shi, Zuoti Xie, Feilong Liu, Darryl L Smith, C Daniel Frisbie, P Paul Ruden, Physical Review B 95 (15), 155315 (2017).
  

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2016

• "Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes", Zuoti Xie, Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden, C Daniel Frisbie, ACS nano 10 (9), 8571-8577 (2016).
  
• "Characterization of the Electric Double Layer Formation Dynamics of a Metal/Ionic Liquid/Metal Structure", Elliot Schmidt, Sha Shi, P Paul Ruden, C Daniel Frisbie, ACS applied materials & interfaces 8 (23), 14879-14884 (2016).
  
• "Mobility anisotropy in monolayer black phosphorus due to scattering by charged impurities", Yue Liu, Tony Low, P Paul Ruden, Physical Review B 93 (16), 165402 (2016).
  

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2015

• "Device model for graphene spin valves", Feilong Liu, Yue Liu, Darryl L Smith, P Paul Ruden, IEEE Transactions on Electron Devices 62 (10), 3426-3432 (2015).
  
• "Current–voltage characteristics of organic heterostructure devices with insulating spacer layers", Sun Yin, Wanyi Nie, Aditya D Mohite, Avadh Saxena, Darryl L Smith, P Paul Ruden, Organic Electronics 24, 26-29 (2015).
  
• "Interface Design Principles for High‐Performance Organic Semiconductor Devices", Wanyi Nie, Gautam Gupta, Brian K Crone, Feilong Liu, Darryl L Smith, P Paul Ruden, Cheng-Yu Kuo, Hsinhan Tsai, Hsing-Lin Wang, Hao Li, Sergei Tretiak, Aditya D Mohite, Advanced Science 2 (6),1500024 (2015).
  
• "Effects of disorder on spin injection and extraction for organic semiconductor spin-valves", Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden, Journal of Applied Physics 117 (8), 085501 (2015).
  

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2014

• "Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements", Feilong Liu, Megan R Kelley, Scott A Crooker, Wanyi Nie, Aditya D Mohite, P Paul Ruden, Darryl L Smith, Physical Review Bs 90 (23), 235314 (2014).
  
• "Scattering in graphene associated with charged out-of-plane impurities", Yue Liu, Aditi Goswami, Feilong Liu, Darryl L Smith, P Paul Ruden, Journal of Applied Physics 116 (23), 234301 (2014).
  
• "Charge Density Dependent Two‐Channel Conduction in Organic Electric Double Layer Transistors (EDLTs)", Wei Xie, Feilong Liu, Sha Shi, P Paul Ruden, C Daniel Frisbie, Advanced Materials 26 (16), 2527-2532 (2014).
  
• "Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies", SA Crooker, F Liu, MR Kelley, NJD Martinez, W Nie, A Mohite, IH Nayyar, S Tretiak, DL Smith, PP Ruden, Applied Physics Letters 105 (15), 161_1 (2014).
  

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2013

• "Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors", Feilong Liu, Wei Xie, Sha Shi, C Daniel Frisbie, P Paul Ruden, Applied Physics Letters 103 (19), 209_1 (2013).
  
• "Rashba-induced spin scattering at graphene edges", Feilong Liu, Yue Liu, Jiaxi Hu, Darryl L Smith, P Paul Ruden, Journal of Applied Physics 114 (9), 093708 (2013).
  
• "Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots", Brijesh Kumar, Stephen A Campbell, P Paul Ruden, Journal of Applied Physics 114 (4), 044507 (2013).
  
• "High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28", Wei Xie, Kathryn A McGarry, Feilong Liu, Yanfei Wu, P Paul Ruden, Christopher J Douglas, C Daniel Frisbie, The Journal of Physical Chemistry C 117 (22), 11522-11529 (2013).
  
• "Control of interface microscopic processes in organic bilayer structures and their effect on photovoltaic device performance", Feilong Liu, Brian K Crone, P Paul Ruden, Darryl L Smith, Journal of Applied Physics 113 (4), 044516 (2013).
  
• "Electron spin flip scattering in graphene due to substrate impurities", Aditi Goswami, Yue Liu, Feilong Liu, P Paul Ruden, Darryl L Smith, MRS Online Proceedings Library Archive 1505,(2013).
  

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2012

• "Electrostatic capacitance in single and double layer organic diodes", Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith, Appl. Phys. Lett. 101 (2), 023501 (2012).
  
• "Device model for electronic processes at organic/organic interfaces", Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith, Journal of Applied Physics 111 (9), 094507 (2012).
  
• "Magneto-resistance of organic spin valves due to spin-polarized tunnel injection and extraction of charge carriers", A Goswami, M Yunus, PP Ruden, DL Smith, Journal of Applied Physics 111(3), 034505
  
• "Percolation model for the threshold voltage of field-effect transistors with nanocrystalline channels", IP Steinke, PP Ruden, Journal of Applied Physics 1448(2012).
  
• "Modeling of Exciplex Recombination in Organic Bilayer Structures", Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith, MRS Online Proceedings Library Archive 111(3), 034505
  

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2011

• "Exciplex current mechanism for ambipolar bilayer organic light emitting diodes", Feilong Liu, P.P. Ruden, I.H. Campbell, and D.L. Smith, Appl. Phys. Lett. 99, 123301 (2011).
  
• "Examination of Au, Cu, and Al contacts in organic field-effect transistors via displacement current measurement", Y. Liang, H.-C. Chang, P.P. Ruden, and C.D. Frisbie, J. Appl. Phys. 110, 064514 (2011).
  
• "Charge carrier extraction dynamics for organic field effect transistor structures", H.-C. Chang, P.P. Ruden, Y. Liang, and C.D. Frisbie, Appl. Phys. Lett. 99, 073306 (2011).
  
• “Performance of a split-spectrum photovoltaic device operating under time-varying spectral conditions,” E.R. Torrey, P.P. Ruden, and P.I. Cohen, J. Appl. Phys. 109, 074909 (2011).
• “Interfaces are critical,” P.P. Ruden, News and Views, Nature Materials 10, 8 (2011).

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2010

• “Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 97, 223304 (2010).
  
• “Transient charge carrier transport effects in organic field effect transistor channels,” H.-C. Chang P.P. Ruden, Y. Liang, and C.D. Frisbie, Mater. Res. Soc. Symp. Proc. 1270, eds. V.R. Bommisetty, N.S. Sariciftci, K. Narayan, G. Rumbles, P. Peumans, J. van de Lagemaat, G. Dennler, S.E. Shaheen, 1270-II01-08 (2010).
  
• “Carrier localization on surfaces of organic semiconductors gated with electrolytes,” Y. Xia, W. Xie, P.P. Ruden, and C.D. Frisbie, Phys. Rev. Lett. 105, 036802 (2010).
• “Transient effects controlling the charge carrier population of organic field effect transistor channels,” H.-C. Chang, P.P. Ruden, Y. Liang, and C.D. Frisbie, J. of Appl. Phys. 107, 104502 (2010).
• Book Chapter: “Modeling spin injection and transport in organic semiconductor structures,” P.P. Ruden and D.L. Smith, in Organic Spintronics, ed.: Z.V. Vardeny, Taylor and Francis (2010).

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2009

• “Spin transport and magneto-resistance in organic semiconductors,” M. Yunus, P.Pauden, and D.L. Smith, Mater. Res. Soc. Symp. Proc. 1154, eds. N. Koch, E. Zojer, S-W. Hla, X. Zhu, 1154-B10-10 (2009).
  
• “Macroscopic modeling of spin injection and spin transport in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Synthetic Metals 160, 204 (2009).
  
• “Comparison of the mobility-carrier density relation in polymer and single-crystal organic transistors employing vacuum and liquid gate dielectrics,” Xia, J. Ho, J. Lee, P.P. Ruden, and C.D. Frisbie, Advanced Materials 21, 2174 (2009).
• “Conducting channel formation and annihilation in organic field-effect structures,” Y. Liang, C.D. Frisbie, H.-C. Chang, and P.P. Ruden, J. Appl. Phys. 105, 024514 (2009).

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2008

• “Spin injection effects on exciton formation in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 93, 123312 (2008).
  
• “Spin-polarized tunneling through potential barriers at ferromagnetic metal/semiconductor Schottky contacts,” D.L. Smith and P.P. Ruden, Phys. Rev. B 78, 125202 (2008).
  
• “Ambipolar electrical spin injection and spin transport in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, J. Appl. Phys. 103, 103714 (2008).
  
• “Quantum efficiency of ambipolar light-emitting polymer field-effect transistors,” J. Zaumseil, C.R. McNeill, M. Bird, D.L. Smith, P.P. Ruden, M. Roberts, M.J. McKiernan, R.H. Friend, and H. Sirringhaus, J. Appl. Phys. 103, 064517 (2008).
  
• “Current vs. voltage characteristics of GaN/AlGN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure,” I.P. Steinke, P.P. Ruden, X. Ni, H. Morkoc, and K.-A. Son, J. Appl. Phys. 103, 064502 (2008).
• "Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors", D.D. Schroepfer, P.P. Ruden, Y. Xia, C.D. Frisbie, and S.E. Shaheen, Appl. Phys. Lett. 92, 013305 (2008).

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2007

• "Effects of Chirality and Diameter on Electron Transport Properties in Individual Semiconducting Carbon Nanotubes", M. Zahed Kauser and P. Paul Ruden, Low-Dimensional Materials — Synthesis, Assembly, Property Scaling, and Modeling, edited by M. Shim, M. Kuno, X-M. Lin, R. Pachter, S. Kumar (Mater. Res. Soc. Symp. Proc. 1017E, Warrendale, PA, 2007), 1017-DD08-49.
• "Device Model for Light-Emitting Field-Effect Transistors with Organic Semiconductor Channel", P.Paul Ruden and Darryl L. Smith, Organic Thin-Film Electronics — Materials, Processes, and Applications, edited by A.C. Arias, J.D. MacKenzie, A. Salleo, N. Tessler (Mater. Res. Soc. Symp. Proc. 1003E , Warrendale, PA, 2007), 1003-O04-08.
• "Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition", Isaiah Steinke, M. Z. Kauser, P. Paul Ruden, Xianfeng Ni, Hadis Morkoc, Kyung-ah Son, Semiconductor Defect Engineering—Materials, Synthetic Structures and Devices II, edited by S. Ashok, P. Kiesel, J. Chevallier, T. Ogino (Mater. Res. Soc. Symp. Proc. 994, Warrendale, PA, 2007), 0994-F11-19.
• "Effects of chirality and diameter on the transport properties of semiconducting carbon nanotubes", M.Z. Kauser and P.P. Ruden, J. Appl. Phys. 102, 033712 (2007).
• "Device modeling of light-emitting ambipolar organic semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, J. Appl. Phys. 101, 084503 (2007).
• "Recombination mechanism dependence of transport and light emission of ambipolar long-channel CNTFETs", C.-T. Hsieh, D.S. Citrin, and P.P. Ruden, Appl. Phys. Lett. 90, 012118 (2007).
• "Electrical characterization of metal/pentacene contacts", L. Diao, C.D. Frisbie, D.D. Schroepfer, and P.P. Ruden, J. Appl. Phys. 101, 014510 (2007).

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2006

• "Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, Appl. Phys. Lett. 89, 233519 (2006).
• "Electron transport in semiconducting chiral carbon nanotubes", M.Z. Kauser, and P.P. Ruden, Appl. Phys. Lett. 89, 162104 (2006).
• "Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices", Y. Liu, M.Z. Kauser, D.D. Schroepfer, P.P. Ruden, J. Xie, Y.T. Moon, N. Onojima, H. Morkoc, K.-A. Son, and M.I. Nathan, J. Appl. Phys. 99, 113706 (2006).
• "Electron Transport in Semiconducting Chiral CNTs", M.Z. Kauser, A. Verma, and P.P. Ruden, Mater. Res. Soc. Symp. Proc. 922E, Warrendale, PA (2006), 0922-U07-50.
• "Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field-effect transistors", Y. Liu, P.P. Ruden, J. Xie, H. Morkoc, and K.-A. Son, Appl. Phys. Lett. 88, 013505 (2006).
• "Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN", Y. Liu, M.Z. Kauser, P.P. Ruden, Z. Hassan, Y.C. Lee, S.S. Ng, and F.K. Yam, Appl. Phys. Lett. 88, 022109 (2006).
• "AlGaN metal-semiconductor-metal structure for pressure sensing applications", Z. Hassan, Y.C. Lee, S.S. Ng, F.K. Yam, Y.Liu, Z. Rang, M.Z. Kauser, P.P. Ruden, and M.I. Nathan, Phys. Stat. Sol. C 3, 2287 (2006).
• "Low and high field transport studies for semiconducting carbon nanotubes", M.Z. Kauser, A. Verma, and P.P. Ruden, Physica E 34, 666 (2006).
• "Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility", P.V. Pesavento, K.P. Puntambekar, C.D. Frisbie, J.C. McKeen, and P.P. Ruden, J. Appl. Phys. 99, 094504 (2006).

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2005

• "Magnetism in n-type GaMnN grown by molecular beam epitaxy", J.E. Van Nostrand, J.D. Albrecht, B. Claflin, Y. Liu. M.I. Nathan, and P.P. Ruden, Phys. Stat. Sol. B 232, 3182 (2005).
• "Effects of radial breathing mode phonons on charge transport in semiconducting zigzag carbon nanotubes", A. Verma, M.Z. Kauser, and P.P. Ruden, Appl. Phys. Lett. 87, 123101 (2005).
• "Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes", A. Verma, M.Z. Kauser, and P.P. Ruden, J. Appl. Phys. 97, 114319 (2005).
• "Modeling of Spin Injection and Spin Transport Properties in Organic and Inorganic Semiconductors", P.P. Ruden, J.D. Albrecht, and D.L. Smith, Organic Thin-Film Electronics, edited by A.C. Arias, N. Tessler, L. Burgi, and J.A. Emerson (Mater. Res. Soc. Symp. Proc. 871E, Warrendale, PA , 2005), I1.6.1.
• "Comparison of spin injection and transport in organic and inorganic semiconductors", P.P. Ruden, D.L. Smith, and J.D. Albrecht, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 1377 (2005).
• "Ensemble Monte Carlo Transport Simulations for Semiconducting Carbon Nano-Tubes", A. Verma, M.Z. Kauser, B.W. Lee, K.F. Brennan, and P.P. Ruden, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 1049 (2005).
• "Effect of wet etching on the magnetic properties on n-type GaMnN layers", Y. Liu, M.I. Nathan, P.P. Ruden, J.E. Van Nostrand, B. Claflin, and J.D. Albrecht, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 359 (2005).
• "Electrical and magnetic characteristics of MBE grown GaMnN", J.D. Albrecht, J.E. van Nostrand, B. Claflin, Y. Liu, M.I. Nathan, and P.P. Ruden, Journal of Superconductivity: Incorporating Novel Magnetism, 18, 69 (2005).
• "Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices", Z. Rang, M.I. Nathan, P.P. Ruden, V. Podzorov, M.E. Gershenson, C.R. Newman, and C.D. Frisbie, Appl. Phys. Lett. 86, 123501 (2005).

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2004

• "Hydrostatic pressure dependence of organic thin-film transistor current vs. voltage characteristics", Z. Rang, M.I. Nathan, P.P. Ruden, R. Chesterfield, and C.D. Frisbie, Appl. Phys. Lett., 85, 5760 (2004).
• "Pentacene Organic Field-Effect Transistor on metal substrates with spin-coated smoothing layer", Y. Jin, Z. Rang, M.I. Nathan, P.P. Ruden, C.R. Newman, and C.D. Frisbie, Appl. Phys. Lett. 85, 4406 (2004).
• "Model for spin injection into conjugated organic semiconductors", P.P. Ruden and D.L. Smith, G3.8, Mat. Res. Soc. Symp. Proc. (2004).
• "Theory of spin injection into conjugated organic semiconductors", P.P. Ruden and D.L. Smith, J. Appl. Phys. 95, 4898 (2004).
• "Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN", Y. Liu, M.Z. Kauser, M.I. Nathan, P.P. Ruden, S. Dogan, H. Morkoc, S.S. Park, and K.Y. Lee, Appl. Phys. Lett. 84, 2112 (2004).

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2003

• "Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, J. Appl. Phys. 93, 4017 (2003).

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2002

• “Channel formation in organic field effect transistors”, T. Li. J.W. Balk, P.P. Ruden, I.H. Campbell, and D.L. Smith, J. Appl. Phys. 91, 4312 (2002).
• Invited paper: “Electronic structure of dynamically two-dimensional hole gas in AlGaN/GaN heterostructures”, A. Sutandi, P.P. Ruden, and K.F. Brennan, J. Phys.: Condens. Matter 14, 3435 (2002).
• "Hole scattering near the valence band edge in wurtzite GaN", J.D. Albrecht, P.P. Ruden, and T.L. Reinecke, J. Appl. Phys. 92, 3803 (2002).
• "Two-dimensional modeling of organic field effect transistors", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat. Res. Soc. Symp. Proc. 725, 137 (2002).
• "Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer", Y. Liu, M.Z. Kauser, M.I. Nathan, P.P. Ruden, A.M. Dabiran, B. Hertog, and P.P. Chow, Appl. Phys. Lett. 81, 3398 (2002).
• "Modeling of channel formation in organic field effect transistors", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat. Res. Soc. Symp. Proc. 708, 237 (2002).

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2001

• “Uniaxial stress dependence of Hall effect in an AlGaAs/GaAs modulation doped heterostructure”, Y. Liu, Z. Rang, A.K. Fung, C. Cai, P.P. Ruden, M.I. Nathan, and H. Shtrikman, Appl. Phys. Lett., 79, 4586 (2001).
• “Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zincblende-phase MESFETs”, M. Farahmand, M. Weber, L. Tirino, K.F. Brennan, and P.P. Ruden, J. Phys.: Condens. Matter, 13, 10477 (2001).
• “Hydrostatic pressure dependence of the photoconductivity of single crystal pentacene and tetracene”, Z. Rang, A. Haraldson, D.M. Kim, P.P. Ruden, and M.I. Nathan, Appl. Phys. Lett. 79, 2731, 2001.
• Book chapter: “Simulation of carrier transport in wide band gap semiconductors”, E. Bellotti, M.Farahmand, E. Goano, E. Ghillino, C. Garetto, G. Ghione, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, “Topics in High Field Transport in Semiconductors”, K.F. Brennan and P.P. Ruden eds., World Scientific Publishing, 2001. (Also appeared in Int. J. High Speed Electron. Systems, Vol. 11, 525-584, 2001).
• “Monte Carlo modeling of wurtzite and 4H phase semiconducting materials,” International Workshop on Computational Electronics, Glasgow, Scotland, May 2000; VLSI Design, Vol. 13, p.p. 117-124 (2001).
• “Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor”, Y. Zhang and P.P. Ruden, E9.14, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
• “Hole Scattering in p-type Wurtzite Gallium Nitride”, J.D. Albrecht and P.P. Ruden, E4.6, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
• “Stress effects in p-type AlGaN/GaN heterostructures”, A. Sutandi, P.P. Ruden, and K.F. Brennan, E4.7, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
• "Monte Carlo simulations of electron transport in III-Nitride wurtzite phase materials system: binaries and ternaries", M. Farahmand, C. Garetto, E. Bellotti, K.F. Brennan, M. Goano, E. Ghillino, G. Ghione, J.D. Albrecht and P.P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001).

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2000

• “Monte Carlo based calculation of transport parameters for wide band gap device simulation,” E. Bellotti, M. Farahmand, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, Mat. Res. Soc. Symp. Vol. 622, T6.24 (2000).
• “Design considerations for AlGaN/GaN heterojunction bipolar transistor structures,” Y. Zhang, C. Cai, and P.P. Ruden, Mat. Res. Soc. Symp. Vol. 622, T6.25 (2000).
• “Thermal modeling of III-nitride heterostructure field effect transistors,” T. Li, P.P. Ruden, J.D. Albrecht, M.G. Ancona, and R. Anholt, Mat. Res. Soc. Symp. Vol. 622, T6.26 (2000).
• "AlGaN/GaN heterostructure field-effect transistor model including thermal effects", J.D. Albrecht, P.P. Ruden, S.C. Binari, and M.G. Ancona, IEEE Trans. Electron Devices 47, 2031 (2000).
• Invited paper: "Monte Carlo simulation of non-cubic symmetry semiconducting materials and devices", K.F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P.P. Ruden, and Y. Zhang IEEE Trans. Electron Devices 47, 1882 (2000).
• "Modeling of Band-to-Band Tunneling Transitions During Drift in Monte Carlo Transport Simulations", P.P. Ruden, E. Bellotti, H.-E. Nilsson, and K.F. Brennan, J. Appl. Phys. 88, 1488 (2000).
• "New materials-theory-based model for output characteristics of AlGaN/GaN Heterostructure Field Effect Transistors", J.D. Albrecht, P.P. Ruden, and M.G. Ancona, MRS Internet J. Nitride Semicond. Res., F99W11.15 (2000).
• "AlGaN/GaN heterojunction bipolar transistor structures - design considerations", Y. Zhang, C. Cai, and P.P. Ruden, J. Appl. Phys. 88, 1067 (2000).
• “Monte Carlo Calculation of Hole Initiated Impact Ionization in 4H Phase SiC” E. Bellotti, H.-E. Nilsson, K.F. Brennan, P.P. Ruden, and R. Trew, J. Appl. Phys. 87, 3864, 2000.
• Book chapter: “Materials theory based modeling of GaN devices,” K.F. Brennan, J. Kolnik, I.H. Oguzman, E. Bellotti, M. Farahmand, P.P. Ruden, R. Wang, and J.D. Albrecht, Chapter 7 of “GaN and related materials II,” Ed. S. J. Pearton, “Optoelectronic Properties of Semiconductors and Superlattices,” Series ed. M.O. Manasreh, Gordon and Breach Science Publishers, 2000.
• "Materials-theory-based modeling of wide band gap semiconductors: from basic properties to devices", K.F. Brennan, E. Bellotti, M. Farahmand, J. Haralson II, P.P. Ruden, J.D. Albrecht, and A. Sutandi, Solid-State Electron. 44, 195 (2000).

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1999

• "High Field Electron Transport Properties of Bulk ZnO", J.D. Albrecht, P.P. Ruden, S. Limijumnong, W.R.L. Lambrecht, and K.F. Brennan, J. Appl. Phys. 86, 6864 (1999).
• "1.3 micron Polarization Insensitive Optical Amplifier Structure Based on Coupled Quantum Wells", Y. Zhang and P.P. Ruden, IEEE J. Quantum Electron. QE-35, 1509 (1999).
• "Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures", J.D. Albrecht, P.P. Ruden, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, Mat. Res. Soc. Symp. Proc. 572, 489 (1999).
• "Ensemble Monte Carlo Calculation of Hole Transport in 3C-SiC", E. Bellotti, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, J. Appl. Phys. 85, 3211 (1999).
• "Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors", P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, MRS Internet Journal of Semicond. Res. 4S1 G6.35 (1999).
• "Monte Carlo Simulation of Hall Effect in n-Type GaN", J.D. Albrecht, P.P. Ruden, and K.F. Brennan, MRS Internet Journal of Semicond. Res. 4S1, G6.6 (1999).

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1998

• "Electron Transport Characteristics of GaN for High Temperature Device Modeling", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys. 83, 4777 (1998).
• "Monte Carlo study of electron initiated impact ionization in bulk zincblende and wurtzite phase ZnS", E. Bellotti, K. F. Brennan, R. Wang, and P. P. Ruden, J. Appl. Phys. 83, 4765 (1998).
• "Monte Carlo Calculation of High- and Low-Field AlGaN Electron Transport Characteristics", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, E. Belotti, and K.F. Brennan, Mat. Res. Soc. Symp. Proc. 482, 815 (1998).
• "Monte Carlo Calculation of Electron Transport in Bulk AlN", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys. 83, 1446 (1998).

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1997

• "Theory of Hole Initiated Impact Ionization in Bulk Zincblende and Wurtzite GaN", I.H. Oguzman, E. Bellotti, K.F. Brennan, J. Kolnik, R. Wang, and P.P. Ruden, J. Appl. Phys. 81, 7827 (1997).
• "Calculation of the Electron Initiated Impact Ionization Transition Rate in Cubic and Hexagonal Phase ZnS", E. Bellotti, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 82, 2961 (1997).
• "Electronic Structure Model for n-type and p-type Silicon Quantum Dots", T.-N. Fang and P.P. Ruden, Superlattices and Microstructures 22, 589 (1997).
• "Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy", J.M. Van Hove, R. Hickman, J.J. Klaassen, P.P. Chow, and P.P. Ruden, Appl. Phys. Lett. 70, 2282 (1997).
• "Shallow Impurity States in Wurtzite and Zincblende Structure GaN", R. Wang, P.P. Ruden, J. Kolnik, I.H. Oguzman, and K.F. Brennan, Mat. Res. Soc. Symp. Proc. 445, 935 (1997).
• "Monte Carlo Calculation of Electron Initiated Impact Ionization in Bulk Zincblende and Wurtzite GaN", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 81, 726 (1997).
• "Dielectric Properties of Wurtzite and Zincblende Structure Gallium Nitride", R. Wang, P.P. Ruden, J. Kolnik, I. Oguzman, and K.F. Brennan, J. Phys. Chem. Sol. 58, 913 (1997).
• "Linear In-Plane Uniaxial Stress Effects on the Device Characteristics of AlGaAs/GaAs Modulation Doped Field Effect Transistors", A.K. Fung, L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and H. Shtrikman, J. Appl. Phys. 81, 502 (1997).

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1996

• "Theoretical Prediction of Zincblende GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Ratio", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, Mat. Res. Soc. Symp. Proc. 423, 45 (1996).
• "Hole Transport Properties of Bulk Zincblende and Wurtzite Phases of GaN Based on an Ensemble Monte Carlo Calculation Including a Full Zone Band Structure", I.H. Oguzman, J. Kolnik, K.F. Brennan, R. Wang, T.-N. Fang, and P.P. Ruden, J. Appl. Phys. 80, 4429 (1996).
• "Calculation of the Wavevector Dependent Interband Impact Ionization Transition Rate in Wurtzite and Zincblende Phases of Bulk GaN", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 79, 8838 (1996).
• "Growth of (111)b-Oriented Resonant Tunneling Devices in a Gas Source Molecular Beam Epitaxy System", L. Cong, J.D. Albrecht, D. Cohen, P.P. Ruden, and M.I. Nathan, J. Vac. Sci. Technol. A 14, 924 (1996).
• "Resonant Tunneling in (001)- and (111)-Oriented III-V Double Barrier Heterostructures Under Transverse and Longitudinal External Stresses", J.D. Albrecht, L. Cong, M.I. Nathan, and P.P. Ruden, J. Appl. Phys. 79, 7763 (1996).
• "Piezoelectric Effects in (001)- and (111)-Oriented Double Barrier Resonant Tunneling Devices", L. Cong, J.D. Albrecht, P.P. Ruden, M.I. Nathan, and D.L. Smith, J. Appl. Phys. 79, 7770 (1996).

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1995

• "Independent Control of Electron Density and Spatial Electron Distribution of Wire Gate Quantum Wire", R. Yang and P.P. Ruden, Proceedings 1995 International Semiconductor Device Research Symposium, 369 (1995).
• "Electron-Electron Interaction Induced Instability in Double Quantum Wire Structures", R. Wang and P.P. Ruden, Phys. Rev. B 52, 7826 (1995).
• "Electron-Electron Interaction in Three-Dimensional Model Quantum Box", R. Yang and P.P. Ruden, J. Appl. Phys. 78, 1798 (1995).
• "Electronic Transport Studies of Bulk Zincblende and Wurtzite Phases of GaN Based on an Ensemble Monte-Carlo Calculation Including a Full Zone Band Structure", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, P.P. Ruden, and Y. Wang, J. Appl. Phys. 78, 1033 (1995).
• "Coulomb Effects Between Electrons in Quantum Box Structure", R. Yang, P.P. Ruden, and D.L. Smith, Phil. Mag. B 71, 359 (1995).
• "Piezoelectric Effects in (001)-Oriented Double Barrier Resonant Tunneling Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 66, 1358 (1995).

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1994

• "Piezoelectric Effects in Double Barrier Resonant Tunneling Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and D.L. Smith, Proceedings of the 22nd International Conference on the Physics of Semiconductors, L.D. Lockwood--editor, 1067, World Scientific: Singapore (1994).
• "Optical Properties of AlGaAs/GaAs n-i-p-i Superlattices and Their Application in Asymmetric Cavity Spatial Light Modulators", M.K. Hibbs-Brenner, P.P. Ruden, J. Lehman, J.J. Liu, and R. Walterson, IEEE J. Quantum Electron. 30, 1227 (1994).

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1993

• "Self-Consistent Calculation of the Structure of Semiconductor Quantum Wires: Semi-classical and Quantum Mechanical Approaches", Z. Wu and P.P. Ruden, J. Appl. Phys. 74, 6234 (1993).
• "Self-Consistent Calculation of the Electronic Structure and Inter-Wire Interaction of Split Gate Double Quantum Wires", Z. Wu, R. Yang, and P.P. Ruden, Proceedings 1993 International Semiconductor Device Research Symposium 229 (1993).
• "Coulomb Coupling Effects in Single Electron Quantum Box Structures", R. Yang, P.P. Ruden, and D.L. Smith, Proceedings 1993 International Semiconductor Device Research Symposium 329 (1993).

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1992

• "Interband Optical Transitions in Doping Superlattices", J. Liu and P.P. Ruden, Superlattices and Microstructures 12, 63 (1992).
• "Exchange Effect in Coupled One-Dimensional Electron Gas Systems", Z. Wu and P.P. Ruden, J. Appl. Phys. 71, 1318 (1992).
• "Self-Consistent Subband Calculations of Hetero n-i-p-i Superlattices and the Effects of Valence Subband Mixing", J. Liu and P.P. Ruden, Superlattices and Microstructures 11, 415 (1992).
• "0.7 Micron Gate Length Complementary Al(0.75)Ga(0.25)As/In(0.25)Ga(0.75)As/GaAs HIGFET Technology for High Speed/Low Power Digital Circuits", D.E. Grider, P.P. Ruden, J.C. Nohava, I.R. Mactaggart, J.J. Stronczer, and R.H. Tran, 1992 IEDM Technical Digest 331 (1992).

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1991

• "Exchange Effects in Coupled Two-Dimensional Electron Gas Systems", P.P. Ruden and Z. Wu, Appl. Phys. Lett. 59, 2165 (1991).
• "Coupled Quasi One-Dimensional Electron Systems", Z. Wu and P.P. Ruden, Proceedings 1991 International Semiconductor Device Research Symposium 105 (1991).

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