Publications

2011

  • "Exciplex current mechanism for ambipolar bilayer organic light emitting diodes", Feilong Liu, P.P. Ruden, I.H. Campbell, and D.L. Smith, Appl. Phys. Lett. 99, 123301 (2011).
  • "Examination of Au, Cu, and Al contacts in organic field-effect transistors via displacement current measurement", Y. Liang, H.-C. Chang, P.P. Ruden, and C.D. Frisbie, J. Appl. Phys. 110, 064514 (2011).
  • "Charge carrier extraction dynamics for organic field effect transistor structures", H.-C. Chang, P.P. Ruden, Y. Liang, and C.D. Frisbie, Appl. Phys. Lett. 99, 073306 (2011).
  • “Performance of a split-spectrum photovoltaic device operating under time-varying spectral conditions,” E.R. Torrey, P.P. Ruden, and P.I. Cohen, J. Appl. Phys. 109, 074909 (2011).
  • “Interfaces are critical,” P.P. Ruden, News and Views, Nature Materials 10, 8 (2011).
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2010

  • “Spin-polarized charge carrier injection by tunneling from ferromagnetic contacts into organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 97, 223304 (2010).
  • “Transient charge carrier transport effects in organic field effect transistor channels,” H.-C. Chang P.P. Ruden, Y. Liang, and C.D. Frisbie, Mater. Res. Soc. Symp. Proc. 1270, eds. V.R. Bommisetty, N.S. Sariciftci, K. Narayan, G. Rumbles, P. Peumans, J. van de Lagemaat, G. Dennler, S.E. Shaheen, 1270-II01-08 (2010).
  • “Carrier localization on surfaces of organic semiconductors gated with electrolytes,” Y. Xia, W. Xie, P.P. Ruden, and C.D. Frisbie, Phys. Rev. Lett. 105, 036802 (2010).
  • “Transient effects controlling the charge carrier population of organic field effect transistor channels,” H.-C. Chang, P.P. Ruden, Y. Liang, and C.D. Frisbie, J. of Appl. Phys. 107, 104502 (2010).
  • Book Chapter: “Modeling spin injection and transport in organic semiconductor structures,” P.P. Ruden and D.L. Smith, in Organic Spintronics, ed.: Z.V. Vardeny, Taylor and Francis (2010).
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2009

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2008

  • “Spin injection effects on exciton formation in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 93, 123312 (2008).
  • “Spin-polarized tunneling through potential barriers at ferromagnetic metal/semiconductor Schottky contacts,” D.L. Smith and P.P. Ruden, Phys. Rev. B 78, 125202 (2008).
  • “Ambipolar electrical spin injection and spin transport in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, J. Appl. Phys. 103, 103714 (2008).
  • “Quantum efficiency of ambipolar light-emitting polymer field-effect transistors,” J. Zaumseil, C.R. McNeill, M. Bird, D.L. Smith, P.P. Ruden, M. Roberts, M.J. McKiernan, R.H. Friend, and H. Sirringhaus, J. Appl. Phys. 103, 064517 (2008).
  • “Current vs. voltage characteristics of GaN/AlGN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure,” I.P. Steinke, P.P. Ruden, X. Ni, H. Morkoc, and K.-A. Son, J. Appl. Phys. 103, 064502 (2008).
  • "Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors", D.D. Schroepfer, P.P. Ruden, Y. Xia, C.D. Frisbie, and S.E. Shaheen, Appl. Phys. Lett. 92, 013305 (2008).
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2007

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2006

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2005

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2004

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2003

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2002

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2001

  • “Uniaxial stress dependence of Hall effect in an AlGaAs/GaAs modulation doped heterostructure”, Y. Liu, Z. Rang, A.K. Fung, C. Cai, P.P. Ruden, M.I. Nathan, and H. Shtrikman, Appl. Phys. Lett., 79, 4586 (2001).
  • “Theoretical study of direct-current and radio-frequency breakdown in GaN wurtzite- and zincblende-phase MESFETs”, M. Farahmand, M. Weber, L. Tirino, K.F. Brennan, and P.P. Ruden, J. Phys.: Condens. Matter, 13, 10477 (2001).
  • “Hydrostatic pressure dependence of the photoconductivity of single crystal pentacene and tetracene”, Z. Rang, A. Haraldson, D.M. Kim, P.P. Ruden, and M.I. Nathan, Appl. Phys. Lett. 79, 2731, 2001.
  • Book chapter: “Simulation of carrier transport in wide band gap semiconductors”, E. Bellotti, M.Farahmand, E. Goano, E. Ghillino, C. Garetto, G. Ghione, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, “Topics in High Field Transport in Semiconductors”, K.F. Brennan and P.P. Ruden eds., World Scientific Publishing, 2001. (Also appeared in Int. J. High Speed Electron. Systems, Vol. 11, 525-584, 2001).
  • “Monte Carlo modeling of wurtzite and 4H phase semiconducting materials,” International Workshop on Computational Electronics, Glasgow, Scotland, May 2000; VLSI Design, Vol. 13, p.p. 117-124 (2001).
  • “Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor”, Y. Zhang and P.P. Ruden, E9.14, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
  • “Hole Scattering in p-type Wurtzite Gallium Nitride”, J.D. Albrecht and P.P. Ruden, E4.6, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
  • “Stress effects in p-type AlGaN/GaN heterostructures”, A. Sutandi, P.P. Ruden, and K.F. Brennan, E4.7, Mat. Res. Soc. Proceedings, Vol. 680E (2001).
  • "Monte Carlo simulations of electron transport in III-Nitride wurtzite phase materials system: binaries and ternaries", M. Farahmand, C. Garetto, E. Bellotti, K.F. Brennan, M. Goano, E. Ghillino, G. Ghione, J.D. Albrecht and P.P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001).
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2000

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1999

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1998

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1997

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1996

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1995

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1994

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1993

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1992

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1991

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